參數(shù)資料
型號(hào): MRF9045M
廠商: Motorola, Inc.
英文描述: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: 該射頻亞微米MOSFET的線射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 153K
代理商: MRF9045M
1
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance
Parameters
Moisture Sensitivity Level 3
RF Power Plastic Surface Mount Package
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
156(1)
1.25(1)
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
150
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Typical)
Machine Model
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.8(1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°
C/W
(1) Simulated
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045M/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
REV 0
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