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參數(shù)資料
| 型號： | MRF891S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MRF891S |
MRF891 MRF891S
2–12
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
6.5
8.0
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (Broadband)
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
Gpe
9.0
10
—
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
η
50
57
—
%
Load Mismatch Stress
(VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz,
VSWR = 20:1, all phase angles)
ψ
No Degradation in Output Power
Figure 1. Broadband Test Fixture
C1 — 39 pF, 100 Mil Chip Capacitor
C2, C8, C15 — 0.8–8.0 pF Johansen Gigatrim
C3, C4 — 12 pF, Mini–Unelco
C5, C13 — 1000 pF, 350 V Unelco
C6, C14 — 10
μ
F, 25 V Tantalum
C7, C11, C12 — 91 pF, Mini–Unelco
C9 — 5.0 pF, MIni–Unelco
C10 — 47 pF, 100 Mil Chip Capacitor
L1, L6 — 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor
L2, L5 — Ferrite Bead
L3 — 4 Turns #16 AWG Choke
L4 — 0.5
″
, #18 AWG Wire
T1, T4 — 50 Ohm Microstrip Line
T2 — W = 165 Mils, = 1946 Mils
T3 — W = 166 Mils, = 1563 Mils
PC Board — 0.031
″
Glass Teflon (
ε
r = 2.56)
C1
T2
T1
T3
T4
SHORTED
PLUG
(FOR
VRE
TEST)
+VCC
GND
″
DUT
SOCKETS
+
+
C11
C6
C5
L1
L2
C7
L3
C2
C4
C3
C9
L5
L6
C12
C13
C14
C15
C10
C8
L4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF892 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF894 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF897 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF897R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF898 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN RF POWER TRANSISTOR |
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