參數(shù)資料
型號(hào): MRF9060MBR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1337-03, 2 PIN
文件頁數(shù): 2/12頁
文件大?。?/td> 422K
代理商: MRF9060MBR1
MRF9060MR1 MRF9060MBR1
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9060MR1
MRF9060MBR1
C6 (Minimum)
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
MRF9060MR1
MRF9060MBR1
1
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
V
GS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
V
DS(on)
0.21
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
g
fs
5.3
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
101
pF
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
53
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
2.5
pF
(continued)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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