參數(shù)資料
型號(hào): MRF9060MBR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1337-03, 2 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 422K
代理商: MRF9060MBR1
3
MRF9060MR1 MRF9060MBR1
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
18
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
40
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
–31.5
–28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
–14.5
–9
dB
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
G
ps
18
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
η
40
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IMD
–31
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IRL
–12.5
dB
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