參數(shù)資料
型號(hào): MRF9060MBR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1337-03, 2 PIN
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 422K
代理商: MRF9060MBR1
MRF9060MR1 MRF9060MBR1
4
MOTOROLA RF DEVICE DATA
Figure 1. 930–960 MHz Broadband Test Circuit Schematic
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060
x 0.520
Microstrip
0.360
x 0.270
Microstrip
0.060
x 0.270
Microstrip
0.130
x 0.060
Microstrip
0.300
x 0.060
Microstrip
0.210
x 0.060
Microstrip
0.600
x 0.060
Microstrip
0.290
x 0.060
Microstrip
0.340
x 0.060
Microstrip
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240
x 0.060
Microstrip
0.240
x 0.060
Microstrip
0.500
x 0.100
Microstrip
0.100
x 0.270
x 0.080
, Taper
0.330
x 0.270
Microstrip
0.120
x 0.270
Microstrip
0.270
x 0.520
x 0.140
, Taper
0.240
x 0.520
Microstrip
0.340
x 0.520
Microstrip
Table 1. 930–960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8–8.0 Gigatrim Variable Capacitors
11 pF Chip Capacitors, B Case (MRF9060MR1)
10 pF Chip Capacitors, B Case (MRF9060MBR1)
95F786
95F787
100B470JP 500X
44F3360
100B110JP 500X
100B100JP 500X
Newark
Newark
ATC
Newark
ATC
C6, C15, C16
C8, C9
C10
C12
C17
L1, L2
N1, N2
WB1, WB2
Board Material
PCB
10 F, 35 V Tantalum Chip Capacitors
10 pF Chip Capacitors, B Case
3.9 pF Chip Capacitor, B Case
1.7 pF Chip Capacitor, B Case
220 F Electrolytic Chip Capacitor
12.5 nH Inductors
N–Type Panel Mount, Stripline
15 mil Brass Wear Blocks
30 mil Glass Teflon
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
93F2975
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
A04T–5
3052–1648–10
Newark
Newark
ATC
ATC
Newark
Coilcraft
Avnet
RF–35–0300
TO–270/TO–272 Surface/Bolt
Taconic
DSelectronics
相關(guān)PDF資料
PDF描述
MRF9060MR1 The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MRF9080LSR3 RF POWER FIELD EFFECT TRANSISTORS
MRF9080SR3 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
MRF9080R3 RF POWER FIELD EFFECT TRANSISTORS
MRF9080 128K 3.3 VOLT SERIAL CONFIGURATION PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9060MR1 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF9060NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9060NR1 功能描述:射頻MOSFET電源晶體管 60W 1GHZ FET TO-270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060R1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs