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參數(shù)資料
| 型號： | MRF9080 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 128K 3.3 VOLT SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 439K |
| 代理商： | MRF9080 |
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vds, V
GS
= 0)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 )
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
V
GS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
g
fs
—
8.0
—
S
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
—
73
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.9
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
P
1dB
68
75
—
W
Common–Source Amplifier Power Gain @ 70 W (Min)
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
G
ps
17
18.5
20
dB
Drain Efficiency @ P
out
= 70 W
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
η
1
47
52
—
%
Drain Efficiency @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
η
2
—
55
—
%
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 70 W, I
DQ
= 600 mA, f = 921 and 960 MHz)
IRL
9.5
12.5
—
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally input matched.
(2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9080LR3 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9080LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9080LR5 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9080LSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9080R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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