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參數(shù)資料
| 型號： | MS52C182A |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +524,288-Word × 16-Bit or 1,048,576-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位靜態(tài)RAM+512k字×16位或1M字×8位 OTPROM) |
| 中文描述： | 65,536字× 16位或131,072詞× 8位靜態(tài)RAM 524,288詞× 16位或1048576，字× 8位一次性可編程（64k的字× 16位或128K的字× 8位靜態(tài)內(nèi)存為512k字× 16位或100萬字× 8位OTPROM） |
| 文件頁數(shù)： | 8/19頁 |
| 文件大小： | 140K |
| 代理商： | MS52C182A |
MS52C182A
SRAM AC Characteristics
8
SRAM Read Cycle (1)
Parameter
Symbol
t
RC
t
AA
t
CO
Unit
nS
nS
nS
nS
nS
nS
Min.
100
Max.
Read Cycle Time
Address Access Time
CEs Access Time
OE Access Time
CEs to Output in Low-Z
OE to Output in Low-Z
Output Hold from Address Change
CEs to Output in High-Z
OE to Output in High-Z
nS
nS
t
OE
t
CLZ
t
OLZ
t
OH
t
CHZ
t
OHZ
100
100
50
10
5
10
35
35
Condition
SRAM Write Cycle (1)
Write Cycle Time
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Setup Time
Data Hold Time
CEs to End of Write
Address Valid to End of Write
Output Active from End of Write
WE to Output in High-Z
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
t
WC
t
AS
t
WP
t
WR
t
DS
t
DH
t
WHZ
t
CW
100
0
75
0
40
0
t
AW
t
WLZ
35
90
90
5
Test Condition
Input Pulse Levels ------------------------- 0.4V/2.4V
Input Timing Reference Levels --------- 0.8V/2.0V
Output Load --------------------------------- 50pF
Output Timing Reference Levels ------- 0.8V/2.0V
Input Rise and Fall Time ----------------- 5nS
Dout
1.85V
690
50pF
(Including scope and
jig capacitance)
nS
Unit
Min.
Max.
Parameter
Symbol
Condition
(Vcc=3.0V
±
0.3V,Ta=-20 to 70
°
C)
(Vcc=3.0V
±
0.3V,Ta=-20 to 70
°
C)
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