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參數(shù)資料
| 型號： | MSAEZ33N20A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:13; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35 RoHS Compliant: No |
| 中文描述： | 33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, POWER PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 48K |
| 代理商： | MSAEZ33N20A |
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
SYMBOL
BV
DSS
CONDITIONS
MIN
200
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
D
= 250
μ
A
BV
DSS
/
T
J
TBD
V/
°
C
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±
20V
DC
, V
DS
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
DS
=0.8
BV
DSS
T
J
= 25
°
C
V
GS
= 0 V T
J
= 125
°
C
V
GS
= 10V, I
D
= 21A T
J
= 25
°
C
I
D
= 33A T
J
= 25
°
C
I
D
= 21A T
J
= 125
°
C
V
DS
≥
15 V; I
D
= 21 A
2.0
3.0
4.0
±
100
±
200
25
250
0.07
V
nA
I
GSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
I
DSS
μ
A
R
DS(on)
0.06
TBD
0.11
23
Forward Transconductance (1)
g
fs
15
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
C
iss
C
oss
C
rss
T
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2600
500
230
40
110
450
160
120
10
70
3900
750
350
60
170
680
240
pF
V
GS
= 10 V, V
DS
= 30 V,
I
D
= 3 A, R
G
= 50
ns
V
GS
= 10 V, V
DS
= 160V, I
D
= 50A
nC
I
F
= I
S
, V
GS
= 0 V MSAE
MSAF
I
F
= 10 A, MSAE
-di/dt = 100 A/
μ
s, MSAF
I
F
= 10 A, MSAE
di/dt = 100 A/
μ
s, MSAF
1.3
1.2
1.6
50
230
tbd
1.8
V
Reverse Recovery Time (Body Diode)
t
rr
ns
Reverse Recovery Charge
Q
rr
μ
C
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
MSAEZ33N20A
MSAFZ33N20A
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