參數(shù)資料
型號： MSAFA1N100P3
廠商： MICROSEMI CORP
元件分類： 功率晶體管
英文描述： N-Channel enhancement mode high density
中文描述： 1 A, 1000 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/2頁
文件大?。?/td> 44K
代理商： MSAFA1N100P3
www.MICROSEMI.com
Data Sheet #MSC
Updated: December 1999
2830 south Fairview Street, Santa A na, CA 92704 USA (714)979.8220 FA X (714)557.5989
Santa Ana Division
Dynamic Electrical Characteristics
MSAFA1N100P3
Fast MOSFET for
Implantable Cardio Defibrillator
Applicaions
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
td (on)
tr
td (off)
tf
VSD
trr
Qrr
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CONDITIONS
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDS = 0.5BVDSS
IC = 20 mA
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 20 mA
Rg = 1.6 Ohms
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 100 mA
Rg = 1.6 Ohms
VGS =0 V, IS = 1 A
IS = 1 A, d IS / dt = 100 A/us
IS = 1 A, d IS / dt = 100 A/us
MIN
TYP
290
36
15
20
1
10
6.3
5.9
315
2.6
6.3
5.8
76
470
MAX
350
45
25
UNIT
pF
pF
pF
nC
nC
nC
ns
ns
ns
us
ns
ns
ns
ns
V
ns
uC
1
130
0.7
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相關(guān)代理商/技術(shù)參數(shù)
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