參數(shù)資料
型號: MSAFA75N10C
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 功率晶體管
英文描述: Circular Connector; No. of Contacts:12; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:15-97 RoHS Compliant: No
中文描述: 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/4頁
文件大?。?/td> 83K
代理商: MSAFA75N10C
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
Copyright
2000
MSC1594.PDF 2000-09-20
W
M
.
C
MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
SANTA ANA DIVISION
ELECTRICAL PARAMETERS @ 25
°
C (unless otherwise specified)
Symbol
Conditions
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Gate-to-Source Leakage Current
I
GSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
I
DSS
Gate Threshold Voltage
V
GS(th)
Static Drain-to-Source On-State Resistance (1)
R
DS(on)
Description
Min
100
Typ.
Max
Unit
V
BV
DSS
V
GS
= 0 V,
I
D
= 250
μ
A
V
GS
=
±
30
V
DC
,
V
DS
= 0
V
DS
=0.8
BV
DSS
V
GS
= 0 V
V
DS
=
V
GS
,
I
D
= 1 mA
V
GS
= 10V,
I
D
= 37.5A
I
D
= 75A
I
D
= 37.5A
V
GS
= 0 V,
V
DS
= 25 V, f = 1 MHz
±
100
250
1000
nA
μ
A
T
J
= 25
°
C
T
J
= 125
°
C
2.0
4.0
0.019
V
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 125
°
C
0.02
0.035
5100
1900
800
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
6120
2660
1200
pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 15 V,
V
DS
= 50 V,
I
D
= 37.5 A,
R
G
= 1.6
16
40
50
20
32
40
75
40
ns
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
V
GS
= 10 V,
V
DS
= 50V,
I
D
= 37.5A
200
40
92
300
60
180
nC
Body Diode Forward Voltage (1)
I
s
= 75A,
V
GS
= 0 V
I
F
= 10 A, di/dt = 100 A/
μ
s
I
F
= 10 A, di/dt = 100 A/
μ
s
1.3
V
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
t
rr
Q
rr
200
1.4
ns
μ
C
E
L
E
C
T
R
I
C
A
L
S
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