參數(shù)資料
型號： MSAGA11F120D
廠商： MICROSEMI CORP-COLORADO
元件分類： 功率晶體管
英文描述： Fast IGBT Die for Implantable Cardio Defibrillator Applications
中文描述： 22 A, 1200 V, N-CHANNEL IGBT
封裝： DIE-2
文件頁數(shù)： 2/3頁
文件大小： 221K
代理商： MSAGA11F120D
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T
C
= 25
°
C unless otherwise specified
DYNAMIC CHARACTERISTICS:
x
Repetitive Rating: Pulse width limited by maximum junction temperature.
y
I
C
= I
C2,
V
CC
= 50V, R
CE
= 25
W
, L = 300
m
H, T
J
= 25
°
C
z
T
J
= 150
°
C
{
See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNIT
C
ies
C
oes
Input Capacitance
V
GE
= 0V
V
CE
= 25V
600
720
pF
Output Capacitance
60
120
pF
C
ros
Qg
Qge
Reverse Transfer Capacitance
Total Gate Charge
{
Gate-Emitter Charge
f = 1 MHz
38
55
pF
V
GE
= 15V
V
CC
= 0.5V
CES
60
4
nC
nC
Qgc
Gate-Collector ("Miller") Charge
Turn-on Delay Time
I
C
=
I
C2
36
35
nC
ns
t
d
(on)
Resistive Switching (25
°
C)
t
r
t
d
(off)
Rise Time
V
GE
= 15V, V
CC
= 0.5V
CES
I
C
=
I
C2
120
ns
Turn-off Delay Time
580
ns
t
f
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
Fall Time
R
e
= 150
W
260
ns
Turn-On Delay Time
Inductive Switching (25
°
C)
55
110
ns
Rise Time
V
CLAMP
(PEAK) = 0.5V
CES
V
GE
= 15V, I
C
=
I
C2
R
G
= 150
W
,
T
J
= +25
°
C
Inductive Switching (125
°
C)
50
100
ns
Turn-off Delay Time
380
570
ns
Fall Time
80
120
ns
Turn-off Delay Time
40
ns
Rise Time
V
CLAMP
(PEAK) = 0.5V
CES
V
GE
= 15V, I
C
=
I
C2
100
ns
Turn-off Delay Time
(tsv)
(tsi)
Fall Time
(tfv)
550
700
ns
t
f
(tfi)
Turn-off Switching Energy
R
G
= 150
W
,
T
J
= +125
°
C
160
40
ns
E
off
gfe
1
mJ
Forward Transconductance
V
CE
=20V,
I
C
=
I
C2
4.5
5
S
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Collector-Emitter Reverse Breakdown Voltage
z
(V
GE
= 15V, I
C
= 10mA)
Gate Threshold Voltage (V
CE
= 6.5 V, I
C
= 350
m
A, T
J
= 25
°
C
Collector-Emitter On Voltage (V
GE
= 12V, I
C
= 1 A
,
T
J
= 25
°
C)
Collector Cut-off Current (V
CE
= 1200 V, V
GE
= 0V, T
J
= 25
°
C)
Gate-Emitter Leakage Current (V
GE
= ±20 V, V
CE
=0V)
1200
-15
4.6
1400
30
5.5
1.45
0.15
5
Volts
6.5
2.0
400
±120
uA
nA
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
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