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參數(shù)資料
| 型號(hào)： | MSC23S4721E-8BS18 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字×72位同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 4194304字× 72位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊（2BANK）（4分字× 72位同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 77K |
| 代理商： | MSC23S4721E-8BS18 |
MSC23S4721E-8BS18 (98.07.17)
Page 5/11
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Rating
Symbol
V
IN
, V
OUT
Vcc, VccQ
Tstg
P
D
*
Ios
Topr
Value
Unit
V
Voltage on any pin relative to Vss
-0.5 to VCC+0.5
Vcc supply voltage
Storage temperature
-0.5 to 4.6
- 55 to 125
V
°C
Power dissipation
18
W
Short circuit current
Operating temperature
50
mA
°C
0 to 70
*: Ta=25
°C
Recommended Operating Conditions
(Voltages referenced to Vss = 0V)
Parameter
Symbol
Min.
Power supply voltage
Vcc, VccQ
3.0
Input high voltage
V
IH
2.0
Input low voltage
V
IL
-0.3
Typ.
3.3
-
-
Max.
3.6
VCC+0.3
0.8
Unit
V
V
V
Capacitance
(Vcc=3.3V
±
0.3V, Ta=25°C f=1MHz)
Parameter
Input capacitance(A0-A11, /RAS, /CAS, /WE)
Input capacitance(/CS0, /CS1, /CS2, /CS3)
Input capacitance(DQMB0-DQMB7)
Input capacitance(CKE0, CKE1)
I/O capacitance(DQ0-DQ63, CB0- CB7)
Input capacitance(CLK0, CLK1, CLK2, CLK3)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
I/O
C
CLK
Max.
104
34
22
58
25
50
Unit
pF
pF
pF
pF
pF
pF
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