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參數(shù)資料
| 型號(hào)： | MSC23S4721E-8BS18 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字×72位同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 4194304字× 72位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊（2BANK）（4分字× 72位同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | MSC23S4721E-8BS18 |
MSC23S4721E-8BS18 (98.07.17)
Page 6/11
DC CHARACTERISTICS
(VCC = 3.3V
±
0.3V, Ta = 0 to 70°C)
Parameter
Symbol
Condition
Module
Spec.
Min
Unit
Note
Bank
CKE
Others
Max
Input Leakage
Current
I
LI
-
-
-
-180
180
uA
Output Leakage
Current
Output High
Voltage
Output Low
Voltage
I
LO
-
-
-
-20
20
uA
V
OH
-
-
I
OH
= -2mA
2.4
-
V
V
OL
-
-
I
OL
= 2mA
-
0.4
V
Average Power
Supply Current
(Operating)
I
CC
1
One Bank
Active
CKE
≥
V
IH
t
CC
=min.
t
RC
=min
No Burst
-
1125
mA
1, 2
I
CC
1D
Both
Banks
Active
CKE
≥
V
IH
t
CC
=min.
t
RC
=min
t
RRD
=min
No Burst
t
CC
=min.
-
1395
mA
1, 2
Power Supply
Current
(Stand by)
Average Power
Supply Current
(Clock
Suspenson)
Average Power
Supply Current
(Active Stand by)
I
CC
2
Both
Banks
Precharge
CKE
≥
V
IH
-
720
mA
3
I
CC
3S
Both
Banks
Active
CKE
≤
V
IL
t
CC
=min.
-
387
mA
2
I
CC
3
One
Banks
Active
Both
Banks
Active
CKE
≥
V
IH
t
CC
=min.
-
765
mA
3
Power Supply
Current (Burst)
I
CC
4
CKE
≥
V
IH
t
CC
=min.
-
1305
mA
1, 2
Power Supply
Current
(Auto-Refresh)
I
CC
5
One Bank
Active
CKE
≥
V
IH
t
CC
=min.
t
RC
=min
-
1080
mA
2
Average Power
Supply Current
(Self-Refresh)
Average Power
Supply Current
(Power down)
I
CC
6
Both
Banks
Precharge
Both
Banks
Precharge
CKE
≤
V
IL
t
CC
=min.
-
36
mA
I
CC
7
CKE
≤
V
IL
t
CC
=min.
-
36
mA
NOTE: 1. Measured with the output open.
2. The address and data can be changed once or left uncharged during one cycle.
3. The address and data can be changed once or left unchanged during two cycles.
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