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參數(shù)資料
| 型號： | MSM5118165F |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| 中文描述： | 1,048,576詞】16位動態(tài)隨機(jī)存儲器：快速頁面模式型與江戶 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 178K |
| 代理商： | MSM5118165F |
FEDD5118165F-01
1
Semiconductor
MSM5118165F
7/15
AC CHARACTERISTICS (2/2)
(V
CC
= 5V
±
10%, Ta = 0 to 70°C) Note1,2,3
MSM5118165
F-60
F-70
MSM5118165
F-50
MSM5118165
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
OE
Hold Time from
CAS
(DQ Disable)
t
CHO
5
5
5
ns
RAS
to
CAS
Delay Time
t
RCD
11
37
14
45
14
50
ns
5
RAS
to Column Address Delay Time
t
RAD
9
25
12
30
12
35
ns
6
Row Address Set-up Time
t
ASR
0
0
0
ns
Row Address Hold Time
t
RAH
7
10
10
ns
Column Address Set-up Time
t
ASC
0
0
0
ns
12
Column Address Hold Time
t
CAH
7
10
13
ns
12
Column Address to
RAS
Lead Time
t
RAL
25
30
35
ns
Read Command Set-up Time
t
RCS
0
0
0
ns
12
Read Command Hold Time
t
RCH
0
0
0
ns
9,12
Read Command Hold Time
referenced to
RAS
t
RRH
0
0
0
ns
9
Write Command Set-up Time
t
WCS
0
0
0
ns
10,12
Write Command Hold Time
t
WCH
7
10
13
ns
12
Write Command Pulse Width
t
WP
7
10
10
ns
WE
Pulse Width (DQ Disable)
t
WPE
7
10
10
ns
OE
Command Hold Time
t
OEH
7
10
13
ns
OE
Precharge Time
t
OEP
7
10
10
ns
OE
Command Hold Time
t
OCH
7
10
10
ns
Write Command to
RAS
Lead Time
t
RWL
7
10
13
ns
Write Command to
CAS
Lead Time
t
CWL
7
10
13
ns
14
Data-in Set-up Time
t
DS
0
0
0
ns
11,12
Data-in Hold Time
t
DH
7
10
13
ns
11,12
OE
to Data-in Delay Time
t
OED
13
15
20
ns
CAS
to
WE
Delay Time
t
CWD
30
34
44
ns
10
Column Address to
WE
Delay Time
t
AWD
42
49
59
ns
10
RAS
to
WE
Delay Time
t
RWD
67
79
94
ns
10
CAS
Precharge
WE
Delay Time
t
CPWD
47
54
64
ns
10
CAS
Active Delay Time from
RAS
Precharge
t
RPC
5
5
5
ns
12
RAS
to
CAS
Set-up Time
(
CAS
before
RAS
)
t
CSR
5
5
5
ns
12
RAS
to
CAS
Hold Time
(
CAS
before
RAS
)
t
CHR
10
10
10
ns
13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5118165F-50T3-K-7 | 制造商:ROHM Semiconductor 功能描述: |
| MSM5118165F-50TSKR1 | 制造商:ROHM Semiconductor 功能描述: |
| MSM5118165F-60J3 | 制造商:ROHM Semiconductor 功能描述: |
| MSM5118165F-60J3-7 | 功能描述:IC DRAM 16MBIT 60NS 42SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| MSM5118165F-60J3DR1 | 制造商:ROHM Semiconductor 功能描述: |
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