參數(shù)資料
型號(hào)： MT28C256564W18SBT-F705P70BTWT
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA88
封裝： LEAD FREE, FBGA-88
文件頁(yè)數(shù)： 3/15頁(yè)
文件大?。?/td> 218K
代理商： MT28C256564W18SBT-F705P70BTWT
256Mb
MULTI
BANK
BURST
FLASH
32Mb/64M
b
AS
YN
C/PA
GE
Cellul
a
rRAM
COMBO
PRELIMINAR
Y
090
05aef
80b
cd
58d
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on
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NOTE:
1. WAIT status is only valid for burst mode operation. WAIT should be ignored for all other operating modes.
2. If A23 = 0, then Flash #1 is selected; and if A23 = 1, then Flash #2 is selected.
3. Not used in asynchronous/page non-latched operation. For latched operation, please refer to the Flash discrete data sheet.
4. Not used in asynchronous/page operation.
Table 3:
Truth Table
MODES
FLASH SIGNALS2
CellularRAM SIGNALS
MEMORY OUTPUT
F_CE#
F_OE#
F_WE#
F_RST#
F_ADV#3
F_WAIT#4
C_CE#
C_ZZ#
C_OE#
C_UB/LB#
C_WE#
MEMORY
BUS
CONTROL
DQ0–
DQ15
FLASH
#1
Read
LL
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
L
H
L
H
X
Asserted
Flash
DIN
Standby
HX
X
H
X
High-Z
CellularRAM memory any mode allowable
Other
High-Z
Output
Disable
LH
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
FLASH
#2
Read
LL
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
L
H
L
H
X
Asserted
Flash
DIN
Standby
HX
X
H
X
High-Z
CellularRAM memory any mode allowable
Other
High-Z
Output
Disable
LH
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
Ce
ll
u
la
rRAM
M
E
MOR
Y
Read
Flash must be in High-Z
LH
L
H
Cellular
RAM
DOUT
Write
LH
H
L
Cellular
RAM
DIN
Standby
Flash any mode allowable
HH
X
Other
High-Z
Output
Disable
LH
H
X
H
Other
High-Z
Deep
Sleep
Mode
HL
X
Other
High-Z
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