參數(shù)資料
型號(hào)： MT29F4G08BABWP
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48
封裝： LEAD FREE, TSOP1-48
文件頁數(shù)： 1/57頁
文件大?。?/td> 1057K
代理商： MT29F4G08BABWP
Products and specifications discussed herein are subject to change by Micron without notice.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Features
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__1.fm - Rev. I 1/06 EN
1
2004 Micron Technology, Inc. All rights reserved.
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
Organization:
Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
Read performance:
Random read: 25s
Sequential read: 30ns (3V x8 only)
Write performance:
Page program: 300s (TYP)
Block erase: 2ms (TYP)
Endurance: 100,000 PROGRAM/ERASE cycles
Data retention: 10 years
First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
VCC: 2.7V–3.6V
Automated PROGRAM and ERASE
Basic NAND command set:
PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
New commands:
PAGE READ CACHE MODE
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
Operation status byte provides a software method of
detecting:
PROGRAM/ERASE operation completion
PROGRAM/ERASE pass/fail condition
Write-protect status
Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
PRE pin: prefetch on power up
WP# pin: hardware write protect
Figure 1:
48-Pin TSOP Type 1
Options
Marking
Density:
2Gb (single die)
MT29F2GxxAAB
4Gb (dual-die stack)
MT29F4GxxBAB
8Gb (quad-die stack)
MT29F8GxxFAB
Device width:
x8
MT29Fxx08x
x16
MT29Fxx16x
Configuration:
# of
die
# of
CE#
# of
R/B#
11
1
A
21
1
B
42
2
F
VCC: 2.7V–3.6V
A
Second generation die
B
Package:
48 TSOP type I (lead-free)
WP
48 TSOP type I (NEW version,
WA
8Gb device only, lead-free)
48 TSOP type I (contact factory)
WG
Operating temperature:
Commercial (0°C to 70°C)
None
Extended temperature (-40°C to +85°C)
ET
相關(guān)PDF資料
PDF描述
MT36JSZF51272PDY-1G6XX 512M X 72 DDR DRAM MODULE, DMA240
MT3S04AU UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MT41J512M4JE-187EIT:A 64M X 4 DDR DRAM, PBGA82
MT42C8255RG-7TR 256K X 8 VIDEO DRAM, 70 ns, PDSO40
MT46V32M16TG-75ELIT 32M X 16 DDR DRAM, 0.75 ns, PDSO66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G08BABWP-ET 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BABWP-ET TR 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT29F4G08BBBWP 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*