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參數(shù)資料
| 型號： | MT28C256564W18SFT-F606P85TTWT |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封裝： | FBGA-88 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MT28C256564W18SFT-F606P85TTWT |
256Mb MULTIBANK BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
PRELIMINARY
09005aef80bcd58d
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C256564W18S.fm - Rev. D Pub 2/04 EN
12
2004 Micron Technology. Inc. All rights reserved.
Electrical Specifications
NOTE:
1. Stresses greater than those listed in Table 4 may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. See technical note TN-00-15, “Recommended Soldering Techniques,” for more information.
Table 4:
Absolute Maximum Ratings
Note 1
PARAMETERS/CONDITIONS
MIN
MAX
UNITS
NOTES
Operating Temperature Range
-25
+85
°C
Storage Temperature Range
-55
+125
°C
Soldering Cycle
+260
°C
Table 5:
Recommended Operating Conditions
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
VCC Supply Voltage (F_VCC and C_VCC)
VCC
1.70
–
1.95
V
I/O Supply Voltage
VCCQ
1.70
–
2.24
V
Table 6:
Capacitance
TA = +25°C; f = 1 MHz
PARAMETER/CONDITION
SYMBOL
TYP
MAX
UNITS
Input Capacitance
CIN
13
17
pF
Output Capacitance
COUT
18
20
pF
Clock Capacitance
CCLK
20
22
pF
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