參數(shù)資料
型號(hào)： MT28C64464W18ABW-F605P70TWT
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA77
封裝： 8 X 10 MM, LEAD FREE, FBGA-77
文件頁數(shù)： 11/13頁
文件大?。?/td> 239K
代理商： MT28C64464W18ABW-F605P70TWT
64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
09005aef80c9c807
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C64432W18A.fm - Rev. F Pub 2/04 EN
7
2003 Micron Technology. Inc. All rights reserved.
Part Numbering Information
Micron’s combination memory devices are available
with several different combinations of features (see
Figure 3: Part Number Chart
NOTE:
1. Contact factory for availabilty.
2. Contact factory for details.
3. Burst mode specifications in the referenced Flash discrete data sheet are not guaranteed.
Valid Part Number Combinations
After building the part number from the part num-
ber chart above, please go to Micron’s Part Marking
Decoder Web site at www.micron.com/decoder to ver-
ify that the part number is offered and valid. If the
device required is not on this list, please contact the
factory.
Device Marking
Due to the size of the package, the Micron standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross-referenced to the Micron part
numbers at www.micron.com/decoder. To view the
location of the abbreviated mark on the device, please
refer to customer service note CSN-11, “Product Mark/
MT28C 644 64 W18 A FW -F70
P85 B WT
Micron Technology
Flash Family
28C = Dual-Supply Flash/CellularRAM Combo
Density/Organization/Banks
64 = 64Mb (4,096K x 16)
bank x = 4 Multibank 16 Banks
(all banks have the same dimensions)
Flash Access Time
F60 = 60ns1
F70 = 70ns
CellularRAM Density
16 = 16Mb CellularRAM (1 Meg x 16)1
32 = 32Mb CellularRAM (2 Meg x 16)
64 = 64Mb CellularRAM (4 Meg x 16)
Flash Read Operation
W = Async/Page or Burst
Package Code
FW = 77-ball (Standard) FBGA 8 x 10 grid
BW = 77-ball (Lead-free) FBGA 8 x 10 grid2
Operating Temperature Range
WT = Wireless (-25C to +85C)
Flash Burst Frequency
None = Async/Page Operation3
5
= 54 MHz
6
= 66 MHz1
CellularRAM Access Time
P70 = 70ns
P85 = 85ns
Flash Boot Block Starting Address
B = Bottom boot
T = Top boot
Operating Voltage Range
W18
VCC
= 1.70V–1.95V
VCCQ = 1.70V–2.24V
W30
VCC
= 1.70V–1.95V
VCCQ = 2.20V–3.30V
CE Select/Special Mark
A = Single CE Flash with Aysnchronous CellularRAM
Production Status
Blank = Production
ES = Engineering Samples
QS = Qualification Samples
Flash Manufacturer‘s
Identification Code
None = Micron (2Ch)
K
= Intel (89h)
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