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參數(shù)資料
| 型號(hào)： | MT28C64464W18ABW-F605P70TWT |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封裝： | 8 X 10 MM, LEAD FREE, FBGA-77 |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | MT28C64464W18ABW-F605P70TWT |
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64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
09005aef80c9c807
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C64432W18A.fm - Rev. F Pub 2/04 EN
11
2003 Micron Technology. Inc. All rights reserved.
NOTE:
1. C_ZZ# ball LOW, CR4 bit in the CellularRAM configuration register set to zero. Measured at 25°C, this standby cur-
rent is the sum of the Flash standby current and the CellularRAM deep-power down mode current.
2. ICCES and ICCWS values are valid when the device is deselected. Any READ operation performed while in suspend
mode will have an additional current draw of suspend current.
3. Automatic power save (APS) mode reduces ICC to approximately ICCS levels.
4. Currents are measured using CellularRAM full array self-refresh. Currents may be further reduced by using the TCR
or PAR features.
Table 6:
DC Characteristics
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets. All currents are in RMS unless otherwise noted.
PARAMETER
SYMBOL
W18/W30
UNITS
NOTES
TYP
MAX
VCC Standby Current
with 16Mb CellularRAM
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCS
115
135
145
A
VCC Standby Current with CellularRAM
Device in deep power-down mode
with 16Mb CellularRAM
with 32Mb CellularRAM
with 64Mb CellularRAM
ISBZZ
35
A
1, 4
VCC Program Suspend Current
with 16Mb CellularRAM
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCWS
115
135
145
A
2, 4
VCC Erase Suspend Current
with 16Mb CellularRAM
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCES
115
135
145
A
2, 4
VCC Automatic Power Save Current
with 16Mb CellularRAM
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCAPS
115
135
145
A
3, 4
Table 7:
CFI
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets.
OFFSET
DATA
DESCRIPTION
78
16Mb: 0010
CellularRAM Density
32Mb: 0020
64Mb: 0040
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| MT28CDM48MGKHBAAMS-5 WT | 制造商:Micron Technology Inc 功能描述:8MX16/64MX32 MCP PLASTIC WIRELESS TEMP PBF WFBGA 1.8V - Bulk |
| MT28EW128ABA1HJS-0SIT | 功能描述:IC FLASH 128MBIT 70NS 56TSOP 制造商:micron technology inc. 系列:- 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):60ns 訪問時(shí)間:95ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP（14x20） 標(biāo)準(zhǔn)包裝:576 |
| MT28EW128ABA1HPC-0SIT | 功能描述:IC FLASH 128MBIT 70NS 64LBGA 制造商:micron technology inc. 系列:- 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):60ns 訪問時(shí)間:95ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64-LBGA（11x13） 標(biāo)準(zhǔn)包裝:1,104 |
| MT28EW128ABA1LJS-0SIT | 功能描述:IC FLASH 128MBIT 70NS 56TSOP 制造商:micron technology inc. 系列:- 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):60ns 訪問時(shí)間:95ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP（14x20） 標(biāo)準(zhǔn)包裝:576 |
| MT28EW128ABA1LPC-0SIT | 功能描述:IC FLASH 128MBIT 70NS 64LBGA 制造商:micron technology inc. 系列:- 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):60ns 訪問時(shí)間:95ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64-LBGA（11x13） 標(biāo)準(zhǔn)包裝:1,104 |
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