- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296642 > MT4JSF6464HIY-80BXX 64M X 64 DDR DRAM MODULE, ZMA204 PDF資料下載
參數(shù)資料
| 型號： | MT4JSF6464HIY-80BXX |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | LEAD FREE, SODIMM-204 |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 618K |
| 代理商： | MT4JSF6464HIY-80BXX |
PDF: 09005aef82b2f090/Source: 09005aef82b2f012
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF4C64_64x64HY.fm - Rev. B 3/08 EN
16
2007 Micron Technology, Inc. All rights reserved
512MB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
Figure 4:
Hysteresis
Notes:
1. TH is the value set in the alarm temperature upper boundary trip register.
2. TL is the value set in the alarm temperature lower boundary trip register.
3. Hyst is the value set in the hysteresis bits of the configuration register.
5
Clear event
0: No effect
1: Clears the event when the temperature sensor is in
the interrupt mode
6
Alarm window lock bit
0: Alarm trips are not locked and can be changed
1: Alarm trips are locked and cannot be changed
7
Critical trip lock bit
0: Critical trip is not locked and can be changed
1: Critical trip is locked and cannot be changed
8
Shutdown mode
0: Enabled
1: Shutdown
The shutdown mode is a power-saving mode that
disables the temperature sensor.
10:9
Hysteresis enable
00: Disable
01: Enable at 1.5°C
10: Enable at 3°C
11: Enable at 6°C
When enabled, a hysteresis is applied to temperature
movement around the trip points. As an example, if the
hysteresis register is enabled to a delta of 6°C, the
preset trip points will toggle when the temperature
reaches the programmed value. These values will reset
when the temperature drops below the trip points
minus the set hysteresis level. In this case, this would be
critical temperature minus 6°C.
The hysteresis is applied both to the above alarm
window and to the below alarm window bits found in
the read-only temperature register. EVENT# is also
affected by this register.
Table 18:
Configuration Register Bit Descriptions (continued)
Bit
Description
Notes
T
H
1
T
L
2
T
H - Hyst
3
T
L - Hyst
Below window bit
Above window bit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT4JSF6464HY-1G4XX | 64M X 64 DDR DRAM MODULE, ZMA204 |
| MT4LC16M4A7DJ-6S | 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32 |
| MT58L128L36P1T-5 | 128K X 36 CACHE SRAM, 2.8 ns, PQFP100 |
| MT58L512Y36FT-8.5 | 512K X 36 CACHE SRAM, 8.5 ns, PQFP100 |
| MT58V1MV18DT-10 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT4JSF6464HY-1G1B1 | 制造商:Micron Technology Inc 功能描述:DRAM Module DDR3 SDRAM 512MByte 204SODIMM Tray |
| MT4JSF6464HY-1G1B1 TR | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Tape and Reel |
| MT4JSF6464HY-1G4B1 | 功能描述:MOD DDR3 SDRAM 512MB 204-SODIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT4JTF12864AZ-1G1D1 | 功能描述:MOD DDR3 SDRAM 1GB 240UDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT4JTF12864AZ-1G1DZES | 制造商:Micron Technology Inc 功能描述:1GB 128MX64 DDR3 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.5V - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。