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參數(shù)資料
| 型號： | MT4LC16M4A7DJ-6S |
| 元件分類： | DRAM |
| 英文描述： | 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 18/20頁 |
| 文件大小： | 338K |
| 代理商： | MT4LC16M4A7DJ-6S |
7
16 Meg x 4 FPM DRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D21_2.p65 – Rev. 5/00
2000, Micron Technology, Inc.
16 MEG x 4
FPM DRAM
OBSOLETE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
-5
-6
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
Row-address hold time
tRAH
8
10
ns
RAS# pulse width
tRAS
50
10,000
60
10,000
ns
RAS# pulse width (FAST PAGE MODE)
tRASP
50
125,000
60
125,000
ns
23
RAS# pulse width during Self Refresh
tRASS
100
s
Random READ or WRITE cycle time
tRC
90
110
ns
RAS# to CAS# delay time
tRCD
18
20
ns
14
READ command hold time (referenced to CAS#)
tRCH
0
ns
16
READ command setup time
tRCS
0
ns
Refresh period
tREF
64
ms
22
Refresh period (4,096 cycles) “S” version
tREF
128
ms
4
RAS# precharge time
tRP
30
40
ns
RAS# to CAS# precharge time
tRPC
0
ns
RAS# precharge time exiting Self Refresh
tRPS
90
105
ns
READ command hold time (referenced to RAS#)
tRRH
0
ns
16
RAS# hold time
tRSH
13
15
ns
READ-WRITE cycle time
tRWC
131
155
ns
RAS# to WE# delay time
tRWD
73
85
ns
18
WRITE command to RAS# lead time
tRWL
13
15
ns
Transition time (rise or fall)
tT2
50
2
50
ns
WRITE command hold time
tWCH
8
10
ns
WRITE command hold time (referenced to RAS#)
tWCR
40
45
ns
WE# command setup time
tWCS
0
ns
18
WRITE command pulse width
tWP
8
10
ns
WE# hold time (CBR Refresh)
tWRH
10
ns
4, 23
WE# setup time (CBR Refresh)
tWRP
10
ns
4, 23
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT4LC16M4A7TG-5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC16M4A7TG-5S | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC16M4A7TG-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC16M4A7TG-6S | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC16M4G3 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
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