參數(shù)資料
型號： MT58L512Y36FT-8.5
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 512K X 36 CACHE SRAM, 8.5 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁數(shù)： 15/34頁
文件大?。?/td> 537K
代理商： MT58L512Y36FT-8.5
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
22
2003 Micron Technology, Inc.
3.3V VDD, 3.3V I/O AC Test Conditions
Input pulse levels ....................VIH = (VDD/2.2) + 1.5V
................................................... VIL = (VDD/2.2) - 1.5V
Input rise and fall times......................................... 1ns
Input timing reference levels ........................ VDD/2.2
Output reference levels................................VDDQ/2.2
Output load .............................. See Figures 11 and 12
3.3V VDD, 2.5V I/O AC Test Conditions
Input pulse levels ................VIH = (VDD/2.64) + 1.25V
............................................... VIL = (VDD/2.64) - 1.25V
Input rise and fall times......................................... 1ns
Input timing reference levels ...................... VDD/2.64
Output reference levels...................................VDDQ/2
Output load .............................. See Figures 13 and 14
3.3V I/O Output Load Equivalents
Figure 11:
Figure 12:
2.5V VDD, 2.5V I/O AC Test Conditions
Input pulse levels .................... VIH = (VDD/2) + 1.25V
.................................................... VIL = (VDD/2) - 1.25V
Input rise and fall times......................................... 1ns
Input timing reference levels ........................... VDD/2
Output reference levels.................................. VDDQ/2
Output load............................... See Figures 13 and 14
2.5V I/O Output Load Equivalents
Figure 13:
Figure 14:
NOTE:
For Figures 11 and 13, 30pF = distributive test jig capacitance.
Q
VT = VDDQ/2.2
30pF
Z = 50
O
50
Q
351
317
5pF
+3.3V
Q
VT = VDDQ/2
30pF
Z = 50
O
50
Q
225
225
5pF
+2.5V
相關(guān)PDF資料
PDF描述
MT58V1MV18DT-10 1M X 18 CACHE SRAM, 5 ns, PQFP100
MT5C2565EC-70/IT 64K X 4 STANDARD SRAM, 70 ns, CQCC28
MT5C256K16B2DJ-12PAT 256K X 16 STANDARD SRAM, 12 ns, PDSO54
MT5C256K16B2DJ-35LAT 256K X 16 STANDARD SRAM, 35 ns, PDSO54
MT5C256K16B2TG-12L 256K X 16 STANDARD SRAM, 12 ns, PDSO54
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT58L512Y36PF-10 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512Y36PF-6 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512Y36PT10 制造商:MT 功能描述:New
MT58L512Y36PT-5 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT58L512Y36PT-6 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*