參數(shù)資料
型號(hào): MT9KDF12872PZ-1G6XX
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, DMA240
封裝: HALOGEN FREE, MO-269, RDIMM-240
文件頁(yè)數(shù): 15/25頁(yè)
文件大?。?/td> 401K
代理商: MT9KDF12872PZ-1G6XX
Figure 4: Hysteresis Applied to Temperature Around Trip Points
TH1
TL2
TH - Hyst3
TL - Hyst
Below window bit
Above window bit
Notes: 1. TH is the value set in the alarm temperature upper boundary trip register.
2. TL is the value set in the alarm temperature lower boundary trip register.
3. Hyst is the value set in the hysteresis bits of the configuration register.
Table 23: Hysteresis Applied to Alarm Window Bits in the Temperature Register
Condition
Below Alarm Window Bit
Above Alarm Window Bit
Temperature
Gradient
Critical Temperature
Temperature
Gradient
Critical Temperature
Sets
Falling
TL - Hyst
Rising
TH
Clears
Rising
TL
Falling
TH - Hyst
Temperature Format
The temperature trip point registers and temperature readout register use a 2’s comple-
ment format to enable negative numbers. The least significant bit (LSB) is equal to
0.0625°C or 0.25°C, depending on which register is referenced. For example, assuming
an LSB of 0.0625°C:
A value of 0x018C would equal 24.75°C
A value of 0x06C0 would equal 108°C
A value of 0x1E74 would equal –24.75°C
1GB, 2GB (x72 SR) 240-Pin Halogen-Free 1.35V DDR3 RDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef83c0f177
kdf9c128_256x72pz.pdf – Rev. A 08/09
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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