參數(shù)資料
型號(hào): MT9KDF12872PZ-1G6XX
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, DMA240
封裝: HALOGEN FREE, MO-269, RDIMM-240
文件頁數(shù): 4/25頁
文件大小: 401K
代理商: MT9KDF12872PZ-1G6XX
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade
Component Speed Grade
-1G6
-125
-1G4
-15E
-1G1
-187E
-1G0
-187
-80C
-25E
-80B
-25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system’s memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x72 SR) 240-Pin Halogen-Free 1.35V DDR3 RDIMM
Electrical Specifications
PDF: 09005aef83c0f177
kdf9c128_256x72pz.pdf – Rev. A 08/09
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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