參數(shù)資料
型號： MTD2N50E1
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 147K
代理商： MTD2N50E1
MTD2N50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
562
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.1
1.0
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
6.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
2.7
3.6
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
VDS(on)
6.0
8.64
6.48
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
gFS
1.2
1.6
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
323
450
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
45
63
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
9.0
20
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
8.0
20
ns
Rise Time
(VDD = 250 Vdc, ID = 2.0 Adc,
VGS =10Vdc
tr
6.0
20
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
16
30
Fall Time
RG
9.1
)
tf
10
20
Gate Charge
(See Figure 8)
QT
11
15
nC
(VDS = 400 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
2.0
VGS = 10 Vdc)
Q2
5.4
Q3
5.1
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.8
0.69
1.6
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
334
ns
(See Figure 14)
(I
2 0 Adc V
0 Vdc
ta
62
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
272
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
0.99
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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