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參數(shù)資料
| 型號： | MTD2N50E1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MTD2N50E1 |
MTD2N50E
http://onsemi.com
5
DRAINTOSOURCE DIODE CHARACTERISTICS
0.50
0.60
0.70
0.80
0.85
0
0.8
1.2
1.6
2.0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
10
1
t,TIME
(ns)
VGS = 0 V
TJ = 25°C
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
QG, TOTAL GATE CHARGE (nC)
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
01
2
4
6
10
ID = 2 A
TJ = 25°C
VDS
VGS
8
Q1
Q2
QT
Q3
35
9
7
10
6
2
0
18
8
4
VDD = 250 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
16
14
12
0.4
0.55
0.65
0.75
450
400
350
300
250
200
150
50
100
0
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MTD3010N | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測器 - 光電二極管 系列:- 標準包裝:1 系列:- 波長:850nm 顏色 - 增強型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標準）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| MTD3010N-DIG | 制造商:Marktech Optoelectronics 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 |
| MTD3010PM | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測器 - 光電二極管 系列:- 標準包裝:1 系列:- 波長:850nm 顏色 - 增強型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標準）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| MTD3010PM_11 | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Peak Sensitivity Wavelength: 900nm |
| MTD3010PM_2 | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Photo Diode |
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