參數(shù)資料
型號： MTDF1N03HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 2000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICROPAK-8
文件頁數(shù)： 7/12頁
文件大小： 132K
代理商： MTDF1N03HDR2
MTDF1N03HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.5
2
0
1
3
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.4
0.5
0.6
0.08
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
0.3
4
2
0.1
TJ = 25°C
2
4
1
2
2.5
3
3.5
4
0.2
01
2
10
0
5
10
15
30
20
25
0
0.12
0.16
3
24
8
6
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
34
10 V
VGS = 4.5
TJ = 25°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 0.85 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
100°C
1
6 V
2.7 V
2.9 V
3.1 V
4.5 V
VGS = 10 V
ID = 1.7 A
TJ = 25°C
3.3 V
1.5
0
0.1
0.14
0.18
0.1
25°C
2.3 V
2.5 V
3.9 V
3.7 V
3.5 V
4.5
2.5
相關(guān)PDF資料
PDF描述
MTDF1N03HDR2 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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MTDF2N06HDR2 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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