參數(shù)資料
型號： MTDF1P02HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICROPAK-8
文件頁數(shù)： 7/12頁
文件大?。?/td> 137K
代理商： MTDF1P02HDR2
MTDF1P02HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. On–Region Characteristics
Figure 4. Transfer Characteristics
Figure 5. On–Resistance versus Drain Current
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
Figure 7. On–Resistance Variation with
Temperature
Figure 8. Drain–to–Source Leakage Current
versus Voltage
2.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4.0
2.0
3.0
1.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
4.0
0
2.0
1.0
0
VGS, GATE-TO-SOURCE (VOLTS)
0.4
0.3
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
1.0
0
0.5
0.4
0.3
0.2
0.1
0
2.0
-25
25
-50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0.5
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4.0
0
100
10
1.0
0.1
16
0
I D
,DRAIN
CURRENT
(AMPS)
I
(W)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.8
0.4
1.2
1.6
3.0
1.0
2.0
3.0
4.0
2.0
4.0
6.0
8.0
10
3.0
4.0
,DRAIN-T
O-SOURCE
RESIST
ANCE
R DS(on)
50
100
75
8.0
12
20
I DSS
,LEAKAGE
(nA)
,DRAIN
CURRENT
(AMPS)
D
R
DS(on)
125
150
(NORMALIZED)
TJ = 25°C
VGS = 4.5 V
2.7 V
VGS = 4.5 V
ID = 0.8 A
25°C
100°C
TJ = 125°C
VGS = 0 V
ID = 1.6 A
TJ = 25°C
TJ = -55°C
100°C
25°C
VDS ≥ 10 V
1.7 V
1.9 V
2.1 V
2.3 V
TJ = 25°C
2.5 V
2.7 V
2.9 V
3.1 V
VGS = 8
4.5 V
3.7 V
3.3 V
0.6
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTDF2N06HDR2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:
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MTD-H5-2.0 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件狀態(tài):有效 功能:- 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.8GHz，1.9GHz，2.1GHz 應(yīng)用:通用 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:- 電壓 - 電源:5V 標(biāo)準(zhǔn)包裝:10
MTDK1S6R 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors)
MTDK3S6R 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET
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