參數(shù)資料
型號(hào)： MTDF2N06HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICROPAK-8
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 109K
代理商： MTDF2N06HDR2
MTDF2N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (Notes 4. & 6.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
60
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Notes 4. & 6.)
(VDS = VGS, ID = 0.25 mAdc)
VGS(th)
1.0
1.6
3.0
Vdc
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (Notes 4. & 6.)
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
RDS(on)
–
180
220
260
m
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.0 Adc) (Note 4.)
gFS
0.5
2.5
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 V
Ciss
–
140
200
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
–
40
60
Transfer Capacitance
f = 1.0 MHz)
Crss
–
12
18
SWITCHING CHARACTERISTICS (Note 5.)
Turn–On Delay Time
td(on)
–
7.5
15
ns
Rise Time
(VDD = 30 Vdc, ID = 1.5 Adc,
VGS =10Vdc
tr
–
8.0
16
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 ) (Note 4.)
td(off)
–
25
50
Fall Time
RG 6.0 ) (Note 4.)
tf
–
14.5
29
Gate Charge
(S
Fi
8)
QT
–
18
26
nC
(See Figure 8)
(VGS = 10 Vdc, ID = 1.5 Adc,
Q1
–
3.1
–
(VGS 10 Vdc, ID 1.5 Adc,
VDD = 30 Vdc) (Note 4.)
Q2
–
6.8
–
Q3
–
5.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.5 Adc, VGS = 0 Vdc) (Note 4.)
(IS = 1.5 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.9
0.83
1.5
–
Vdc
Reverse Recovery Time
trr
–
24
–
ns
(IS = 1.5 Adc, VGS = 0 Vdc,
ta
–
18
–
(IS 1.5 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s) (Note 4.)
tb
–
6.0
–
Reverse Recovery Stored Charge
QRR
–
0.02
–
C
4. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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