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參數(shù)資料
| 型號： | MTSF2P02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 236K |
| 代理商： | MTSF2P02HD |
7
Motorola TMOS Power MOSFET Transistor Device Data
I
t, TIME
Figure 13. Reverse Recovery Time (trr)
di/dt = 300 A/
μ
s
Standard Cell Density
trr
High Cell Density
trr
tb
ta
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
14) defines the maximum simultaneous drain–to–source vol-
tage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25
°
C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the pro-
cedures discussed in AN569, “Transient Thermal Resistance
– General Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10
μ
s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 8 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
1 ms
100
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTSF2P03HD | SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF3203 | SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTV20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM |
| MTV6N100E | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTSF2P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述: |
| MTSF3203 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N02HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.1A 8-Pin Micro T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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