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參數(shù)資料
| 型號： | N02L163WN1AB2-55I |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, GREEN, BGA-48 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | N02L163WN1AB2-55I |
N02L163WN1A
(DOC# 14-02-014 REV N ECN# 01-1267)
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0A at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1s (Typical)
Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
RoHS Compliant
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current (ISB),
Typical
Operating
Current (Icc),
Typical
N02L163WN1AB
48 - BGA
-40oC to +85oC 2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2
A2 mA @ 1MHz
N02L163WN1AT
44 - TSOP II
N02L163WN1AB2
48 - BGA Green
N02L163WN1AT2
44 - TSOP II Green
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N02L163WN1AB-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2-55I | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
| N02L163WN1AT2-55ITR | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
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