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參數(shù)資料
| 型號(hào)： | NE5517N |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 2/15頁(yè) |
| 文件大小： | 0K |
| 描述： | IC AMP XCONDUCTANCE DUAL 16-DIP |
| 產(chǎn)品變化通告： | Product Obsolescence 11/Feb/2009 |
| 標(biāo)準(zhǔn)包裝： | 25 |
| 放大器類型： | 跨導(dǎo) |
| 電路數(shù)： | 2 |
| 輸出類型： | 推挽式 |
| 轉(zhuǎn)換速率： | 50 V/µs |
| 增益帶寬積： | 2MHz |
| 電流 - 輸入偏壓： | 400nA |
| 電壓 - 輸入偏移： | 400µV |
| 電流 - 電源： | 2.6mA |
| 電流 - 輸出 / 通道： | 650µA |
| 電壓 - 電源，單路/雙路(±)： | 4 V ~ 44 V，±2 V ~ 22 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 16-DIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 16-DIP |
| 包裝： | 管件 |
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NE5517, NE5517A, AU5517
http://onsemi.com
10
Voltage-Controlled Resistor (VCR)
Because an OTA is capable of producing an output current
proportional to the input voltage, a voltage variable resistor
can be made. Figure 26 shows how this is done. A voltage
presented at the RX terminals forces a voltage at the input.
This voltage is multiplied by gM and thereby forces a current
through the RX terminals:
Rx +
R ) RA
gM ) RA
where gM is approximately 19.21 mMHOs at room
temperature. Figure 27 shows a Voltage Controlled Resistor
using linearizing diodes. This improves the noise
performance of the resistor.
Voltage-Controlled Filters
Figure 28 shows a Voltage Controlled Low-Pass Filter.
The circuit is a unity gain buffer until XC/gM is equal to
R/RA. Then, the frequency response rolls off at a 6dB per
octave with the 3 dB point being defined by the given
equations. Operating in the same manner, a Voltage
Controlled High-Pass Filter is shown in Figure 29. Higher
order filters can be made using additional amplifiers as
Voltage-Controlled Oscillators
Figure 32 shows a voltage-controlled triangle-square
wave generator. With the indicated values a range from
2.0 Hz to 200 kHz is possible by varying IABC from 1.0 mA
to 10
mA.
The output amplitude is determined by IOUT × ROUT.
Please notice the differential input voltage is not allowed
to be above 5.0 V.
With a slight modification of this circuit you can get the
sawtooth pulse generator, as shown in Figure 33.
APPLICATION HINTS
To hold the transconductance gM within the linear range,
IABC should be chosen not greater than 1.0 mA. The current
mirror ratio should be as accurate as possible over the entire
current range. A current mirror with only two transistors is
not recommended. A suitable current mirror can be built
with a PNP transistor array which causes excellent matching
and thermal coupling among the transistors. The output
current range of the DAC normally reaches from 0 to
2.0 mA. In this application, however, the current range is
set through RREF (10 kW) to 0 to 1.0 mA.
IDACMAX + 2 @
VREF
RREF
+ 2 @ 5V
10kW +
1mA
VCC
4
3
+
NE5517/A
8
VOUT
VCC
11
+VCC
RX
5
IO
2
R
7
INT
C
+VCC
VC
RX +
R ) RA
gM @ RA
Figure 26. VCR
30kW
200W
100kW
10kW
VCC
4
3
NE5517/A
8
VCC
11
+VCC
RX
5
ID
2
R
7
INT
C
+VCC
VC
+VCC
VOS
RP
1
6
Figure 27. VCR with Linearizing Diodes
30kW
1kW
100kW
10kW
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| NE5517NG | 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube |
| NE5520279A | 功能描述:射頻MOSFET電源晶體管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5520279A-A | 功能描述:射頻MOSFET電源晶體管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5520279A-EVPW04 | 功能描述:射頻開發(fā)工具 Silicon Medium Pwr LDMOS RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE5520279A-EVPW09 | 功能描述:射頻開發(fā)工具 For NE5520279A-A Power at 900 MHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
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