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參數(shù)資料
| 型號(hào)： | NTB10N60 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 601 Volts N-Channel(10A,600V,N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管(D2PAK封裝）) |
| 中文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | NTB10N60 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTP10N60/D
NTP10N60, NTB10N60
Preferred Devices
Advance Information
Power MOSFET
10 Amps, 600 Volts
N–Channel TO–220 and D
2
PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower R
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specifications
Avalanche Energy Specified
Typical Applications
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
600
Vdc
Drain–Gate Voltage (R
GS
= 1.0 M
)
V
DGR
600
Vdc
Gate–Source Voltage
– Continuous
– Non–Repetitive (t
p
10 ms)
V
GS
V
GSM
20
40
Vdc
Drain– Continuous
– Continuous @ 100
°
C
– Single Pulse (t
p
10
μ
s)
I
D
I
D
I
DM
10
8.0
35
Adc
Total Power Dissipation
Derate above 25
°
C
P
D
201
1.61
Watts
W/
°
C
Operating and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
Single Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= 100 V, V
GS
= 10 Vdc,
I
L
= 10 A, L = 10 mH, R
G
= 25
)
E
AS
500
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
R
θ
JC
R
θ
JA
R
θ
JA
0.62
62.5
50
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
″
from case
for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
10 AMPERES
600 VOLTS
R
DS(on)
= 0.75
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
NTP10N60
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
NTx10N60 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTP10N60
LLYWW
Gate
Source
Drain
NTB10N60
LLYWW
Gate
Source
Drain
Drain
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
NTB10N60
D
2
PAK
50 Units/Rail
NTB10N60T4
D
2
PAK
800/Tape & Reel
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