參數(shù)資料
型號: NTB10N60
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 10 Amps, 601 Volts N-Channel(10A,600V,N溝道增強型MOS場效應(yīng)管(D2PAK封裝))
中文描述: 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數(shù): 5/8頁
文件大?。?/td> 67K
代理商: NTB10N60
NTP10N60, NTB10N60
http://onsemi.com
5
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
t, TIME (seconds)
r
R
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
150
125
100
75
50
25
500
450
400
100
50
0
350
300
250
200
150
I
D
= 10 A
E
A
,
A
0.01
0.1
1
1.00E–05
1.00E–04
1.00E–03
1.00E–02
1.00E–01
1.00E+00
1.00E+01
SINGLE PULSE
D = 0.5
0.2
0.1
0.05
0.02
0.01
相關(guān)PDF資料
PDF描述
NTP10N60 Power MOSFET 10 Amps, 600 Volts N-Channel(10A,600V,N溝道增強型MOS場效應(yīng)管(TO-220封裝))
NTB12N50 N-Channel Enhancement-Mode TMOS Power FET(12A,500V,N溝道增強型TMOS場效應(yīng)管)
NTB13N10 Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode(13 A, 100 V,N通道,增強模式功率MOSFET)
NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)
NTB18N06LT4 Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTB1226AS 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 12MM
NTB125N02R 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB125N02R_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
NTB125N02RG 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB125N02RT4 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube