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參數(shù)資料
| 型號： | NTB5404N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 40 V, 136 A(40V, 136A, 功率MOSFET) |
| 中文描述： | 40 V的功率MOSFET，136（40V的，136A章，功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 70K |
| 代理商： | NTB5404N |
NTB5404N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
34
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 40
V
T
J
= 25
°
C
1.0
A
T
J
= 100
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
30 V
±
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
3.5
V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
8.2
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 40
A
3.5
4.5
m
V
GS
= 5.0
V, I
D
= 15
A
5.1
7.0
Forward Transconductance
g
FS
V
DS
= 10
V, I
D
= 15
A
35
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 32
V
4300
7000
pF
Output Capacitance
C
OSS
1075
1700
Reverse Transfer Capacitance
C
RSS
450
1000
Total Gate Charge
Q
G(TOT)
V
GS
= 10 V, V
DS
= 32
V,
I
D
= 40
A
125
nC
Threshold Gate Charge
Q
G(TH)
5.5
GatetoSource Charge
Q
GS
12.5
GatetoDrain Charge
Q
GD
55
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
TurnOn Delay Time
t
d(ON)
V
GS
= 10
V, V
DD
= 32
V,
I
D
= 40
A, R
G
= 2.5
10
ns
Rise Time
t
r
65
TurnOff Delay Time
t
d(OFF)
85
Fall Time
t
f
85
SWITCHING CHARACTERISTICS, V
GS
= 5 V
(Note 3)
TurnOn Delay Time
t
d(ON)
V
GS
= 5
V, V
DD
= 20
V,
I
D
= 20
A, R
G
= 2.5
25
ns
Rise Time
t
r
175
TurnOff Delay Time
t
d(OFF)
46
Fall Time
t
f
62
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25
°
C
0.8
1.1
V
T
J
= 125
°
C
0.65
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ s,
I
S
A
75
ns
Charge Time
t
a
38
Discharge Time
t
b
38
Reverse Recovery Charge
Q
RR
140
nC
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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