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參數(shù)資料
| 型號： | NTP10N60 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 600 Volts N-Channel(10A,600V,N溝道增強(qiáng)型MOS場效應(yīng)管（TO-220封裝）) |
| 中文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NTP10N60 |
NTP10N60, NTB10N60
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
600
–
–
585
–
–
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(V
DS
= 600 Vdc, V
GS
= 0 Vdc)
(V
DS
= 600 Vdc, V
GS
= 0 Vdc, T
J
=125
°
C)
I
DSS
–
–
–
–
10
100
μ
Adc
Gate–Body Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0)
I
GSS(f)
I
GSS(r)
–
–
–
–
100
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
I
D
= 0.25 mA, V
DS
= V
GS
Temperature Coefficient (Negative)
V
GS(th)
2.0
–
2.5
5.8
4.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
R
DS(on)
–
0.6
0.75
Ohm
Drain–to–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 5 Adc, T
J
= 125
°
C)
V
DS(on)
–
–
–
–
9.0
7.9
Vdc
Forward Transconductance (V
DS
= 8 Vdc, I
D
= 5 Adc)
g
FS
3.0
10
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
–
1840
2580
pF
Output Capacitance
C
oss
–
470
660
Transfer Capacitance
C
rss
–
20
40
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
t
d(on)
–
11.5
20
ns
Rise Time
(V
DD
= 300 Vdc, I
D
= 10 Adc,
V
GS
= 10 Vdc,
= 9.1
R
G
9.1
)
t
r
–
20
40
Turn–Off Delay Time
t
d(off)
–
50
100
Fall Time
t
f
–
30
60
Gate Charge
Q
T
–
36
50
nC
= 400 Vdc, I
= 10 Adc,
(V
DS
400 Vdc, I
D
10 Adc,
V
GS
= 10 Vdc)
Q
1
–
8.0
–
Q
2
–
11
–
Q
3
–
20
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(I
S
= 10 Adc, V
GS
= 0 Vdc)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
–
–
0.85
0.75
1.0
–
Vdc
Reverse Recovery Time
t
rr
–
510
–
ns
(I = 10 Adc V
= 10 Adc, V
GS
= 0 Vdc,
di
S
/dt = 100 A/
μ
s)
t
a
–
165
–
t
b
–
345
–
Reverse Recovery Stored
Charge
Q
RR
–
4.1
–
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
–
–
3.5
4.5
–
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
–
7.5
–
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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