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參數(shù)資料
| 型號： | NTP10N60 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 600 Volts N-Channel(10A,600V,N溝道增強型MOS場效應管（TO-220封裝）) |
| 中文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NTP10N60 |
NTP10N60, NTB10N60
http://onsemi.com
3
5 V
V
GS
= 10 V
Figure 1. On–Region Characteristics
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
18
16
14
12
10
8
6
4
16
14
12
10
8
6
4
2
0
Figure 2. Transfer Characteristics
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
8
7
6
5
4
3
2
1
0
20
17.5
15
12.5
10
7.5
5
2.5
0
2
0
Figure 3. On–Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
1.8
1.6
1.4
1.2
1
0.4
16
14
12
10
8
6
4
2
0
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
16
14
12
10
8
6
4
2
0
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.2
0
0.85
0.90
Figure 5. On–Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
2.5
2.25
2.0
1.75
1.5
1.25
1.0
0.75
0.5
150
125
100
75
50
25
0
–25
–50
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
200
100
0
1000
100
10
1
0.25
0
10,000
Figure 6. Drain–to–Source Leakage Current
versus Voltage
I
D
,
I
D
,
R
D
,
20
18
0.8
0.6
R
D
,
20
18
R
D
I
D
,
400
300
600
500
T
J
= 25
°
C
4 V
4.5 V
5.5 V
T
J
= –55
°
C
25
°
C
100
°
C
V
DS
≥
10 V
T
J
= 100
°
C
25
°
C
–55
°
C
V
GS
= 10 V
T
J
= 25
°
C
15 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 5 A
T
J
= 125
°
C
25
°
C
100
°
C
V
GS
= 0 V
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