參數(shù)資料
型號： P0080ECRP1
英文描述： MCU CMOS 40 LD 20MHZ 4K EPRM, -40C to +125C, 40-PDIP, TUBE
中文描述： SIDAC的| 25V的五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 121/161頁
文件大?。?/td> 986K
代理商： P0080ECRP1
SIDACtor
Data Book
SIDACtor Selection Criteria
Teccor Electronics
(972) 580-7777
5 - 5
T
$%$
When selecting a SIDACtor, the following criteria should be used:
Off-state Voltage (V
DRM
)
The V
DRM
of the SIDACtor must be greater than the maximum operating voltage of the
circuit that the SIDACtor is protecting.
Example 1: For a POTS (Plain Old Telephone Service) application, convert the maximum
operating ring voltage (150V
RMS
) to a peak voltage and add the maximum DC bias
of the central office battery:
150V
RMS
√
2 + 56.6V
PK
= 268.8V
PK
∴
V
DRM
>268.8V
Example 2: For an ISDN application, add the maximum voltage of the DC power supply to the
maximum voltage of the transmission signal:
150V
PK
+ 3V
PK
= 153V
PK
∴
V
DRM
>153V
Switching Voltage (V
S
)
The V
S
of the SIDACtor should be equal to or less than the instantaneous peak
voltage rating of the component it is protecting.
Example 1: V
S
≤
V
Relay Breakdown
Example 2: V
S
≤
SLIC V
PK
Peak Pulse Current (I
PP
)
For circuits that do not require additional series resistance, the surge current rating
(I
PP
) of the SIDACtor should be greater than or equal to the surge currents associated
with the lightning immunity tests of the applicable regulatory requirement (I
PK
).
I
PP
≥
I
PK
For circuits that utilize additional series resistance, the surge current rating (I
PP
) of the
SIDACtor should be greater than or equal to the
available
surge currents associated
with the lightning immunity tests of the applicable regulatory requirement (I
PK(available)
).
I
PP
≥
I
PK(available)
The maximum available surge current is calculated by dividing the peak surge voltage
(V
PK
) by the total circuit resistance (R
TOTAL
).
I
PK(available)
= V
PK
/R
TOTAL
For longitudinal surges (TIP-GND, RING-GND), R
TOTAL
is calculated for both TIP and
RING.
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
SOURCE
R
TOTAL
= R
RING
+ R
SOURCE
相關PDF資料
PDF描述
P0080ECRP2 MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-MQFP, TRAY
P0300EC MCU CMOS 40 LD 10MHZ 8K OTP, 0C to +70C, 40-PDIP, TUBE
P0300ECRP1 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +125C, 40-PDIP, TUBE
P0300ECRP2 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +85C, 40-PDIP, TUBE
P0300SARP MCU CMOS 44 LD 20MHZ 8K OTP, 0C to +70C, 44-PLCC, TUBE
相關代理商/技術參數(shù)
參數(shù)描述
P0080ECRP2 功能描述:硅對稱二端開關元件 500A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q12ALRP 功能描述:硅對稱二端開關元件 6V 50A QFN 3X3 2L SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q12ALRP_11 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Q2L Series 3x3 QFN are low capacitance SIDACtor? devices designed to protect
P0080Q12BLRP 功能描述:硅對稱二端開關元件 6V 100A QFN 3X3 2L SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q22CLRP 功能描述:硅對稱二端開關元件 6V 500A SIDACtor RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*