參數(shù)資料
型號： P0080ECRP1
英文描述： MCU CMOS 40 LD 20MHZ 4K EPRM, -40C to +125C, 40-PDIP, TUBE
中文描述： SIDAC的| 25V的五（公報(bào)）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 99/161頁
文件大?。?/td> 986K
代理商： P0080ECRP1
SIDACtor
Data Book
UL 1950 3RD Edition/CSA C22.2 No. 950-95
Teccor Electronics
(972) 580-7777
4 - 25
R
R
5.
Spacing
- Applies to parts in the TNV circuits that might ignite under over-
voltage conditions. Spacing requirements mandate that parts be separated
from internal materials of flammability class V-2 or lower, by at least 25mm of
air or a barrier material of flammability class V-1 or better. Parts should also be
separated from openings in the top or sides of the enclosure by at least 25mm
of air or a material barrier.
6.
Over-Voltage Tests
- Equipment may be subject to the tests in Table 4-18 which
are designed to simulate contact with primary power, short term induction as a
result of a primary power fault to a multi-earth neutral, a long duration power
fault to ground, and direct contact between the power mains and a
telecommunications cable.
Figure 4-11 Over-Voltage Flowchart
Over-Voltage Test Procedures
The following criteria is used when applying the over-voltage tests found in Table 4-18:
1.
Test Set-Up
- Equipment is to be mounted as it is intended to be used. Tests
may be conducted on either the equipment as an assembly, individual
subassemblies, or a partial assembly containing those components which may
be exposed to an over-voltage condition.
2.
Indicators
- Before testing, two single pieces of cheesecloth are to be wrapped
tightly around the assembly, subassembly, or partial assembly. The
cheesecloth acts as an indicator for conditions that may result in fire.
No
No
No
No
No
Yes
2
-S
100 A
1a
No Overvoltage Testing
Connects to Outside Cable
Yes
Yes
Li1.3 A
1b
26 AWG
Yes
Pass 1
Yes
Pass 6.3.3
2
Fire Enclosure
3
Yes
Yes
Acceptable
EnFire
No
No
Yes
Pass 5
4
Pass 2
5
Yes
No
No
No
Yes
AccNot
相關(guān)PDF資料
PDF描述
P0080ECRP2 MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-MQFP, TRAY
P0300EC MCU CMOS 40 LD 10MHZ 8K OTP, 0C to +70C, 40-PDIP, TUBE
P0300ECRP1 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +125C, 40-PDIP, TUBE
P0300ECRP2 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +85C, 40-PDIP, TUBE
P0300SARP MCU CMOS 44 LD 20MHZ 8K OTP, 0C to +70C, 44-PLCC, TUBE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0080ECRP2 功能描述:硅對稱二端開關(guān)元件 500A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q12ALRP 功能描述:硅對稱二端開關(guān)元件 6V 50A QFN 3X3 2L SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q12ALRP_11 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Q2L Series 3x3 QFN are low capacitance SIDACtor? devices designed to protect
P0080Q12BLRP 功能描述:硅對稱二端開關(guān)元件 6V 100A QFN 3X3 2L SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080Q22CLRP 功能描述:硅對稱二端開關(guān)元件 6V 500A SIDACtor RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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