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參數(shù)資料
| 型號： | P11C68-IGDCBS |
| 廠商： | Zarlink Semiconductor Inc. |
| 英文描述： | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| 中文描述： | 的CMOS / SNOS非易失性SRAM的高性能8畝× 8非易失性靜態(tài)RAM的 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 162K |
| 代理商： | P11C68-IGDCBS |
P10C68/P11C68
3
Value
Parameter
Supply voltage
Input logic '1' voltage
Input logic '0' voltage
Ambient operating temperature
commercial
industrial
Symbol
V
CC
V
IH
V
IL
T
amb
T
amb
Min.
2.2
V
SS
-0.5
0
-40
Conditions
All inputs
All inputs
Max.
V
CC
+0.5
0.8
+70
+85
Typ.
5.0
DC OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Commercial temperature range
Test conditions (unless otherwise stated):
Tamb = 0
°
C to 70
°
C, Vcc = +5V (See notes 1, 2 and 3)
Characteristic
Average power supply
current
Average power supply current
during STORE cycle
Average power supply current
(standby, cycling TTL input levels)
Average power supply current
(standby, stable CMOS input levels)
Input leakage current (any input)
Off state output leakage current
Output logic '1' voltage
Output voltage '0' voltage
Symbol
I
CC1
I
CC2
I
SB1
I
SB2
I
ILK
I
OLK
V
OH
V
OL
Value
Units
mA
mA
mA
mA
mA
mA
μ
A
μ
A
V
V
Conditions
t
AVAV
= 35ns
t
AVAV
= 45ns
All inputs at V
IN
≤
0.2V
t
AVAV
= 35ns
t
AVAV
= 45ns
E(bar)
≥
V
IH
, all other inputs
cycling
E (bar)
≥
(V
CC
-0.2V), all other
inputs at V
IN
≤
0.2V or
≥
(V
CC
-
0.2V)
V
CC
= max, V
IN
= V
SS
to V
CC
V
CC
= max, V
IN
= V
SS
to V
CC
I
OUT
= 4mA
I
OUT
= 8mA
Max.
75
65
50
23
20
1
±
1
±
5
0.4
Min.
2.4
NOTES
1.
2.
I
CC1
is dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
Bringing E (bar)
≥
V
IH
will not produce standby currents levels until any non-volatile cycle in progress has timed out. See
Mode Selection table.
I
CC2
is the average current required for the duration of the STORE cycle (t
STORE
) after the sequence that initiates the
cycle.
3.
ABSOLUTE MAXIMUM RATINGS
Voltage on typical input
relative to VSS
Voltage on DQ0-7 and G(bar)
Temperature under Bias
Storage temperature
Power dissipation
DC output current
(one output at a time, one second duration)
-0.6V to 7.0V
-0.5V to (Vcc + 0.5V)
-55
°
C to + 125
°
C
-65
°
C to + 150
°
C
1W
15mA
NOTE
Stresses greater than those listed in the Absolute
Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; functional operation of
the device at any other conditions than those indicated in the
operational sections of the specification is not implied.
Exposure to absolute maximum ratings conditions for
extended periods may affect reliability.
Units
V
V
V
o
C
o
C
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參數(shù)描述 |
|---|---|
| P11C68-IGDPBS | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
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