參數(shù)資料
型號: P11C68-IGDPBS
廠商: Zarlink Semiconductor Inc.
英文描述: CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
中文描述: 的CMOS / SNOS非易失性SRAM的高性能8畝× 8非易失性靜態(tài)RAM的
文件頁數(shù): 11/17頁
文件大?。?/td> 162K
代理商: P11C68-IGDPBS
P10C68/P11C68
11
t
GLNL
t
NLHN
t
WHNL
t
NLQX
NE
E
DQ
(DATA
OUT)
HIGH IMPEDANCE
W
t
ELNL
t
NLQZ
G
F
igure 11. P10C68 RECALL CYCLE 1: NE (bar) controlled timing diagram (see note 16).
t
GLEL
t
NLEL
t
WHEL
t
ELQX2
E
DQ
(DATA
OUT)
HIGH IMPEDANCE
W
G
NE
t
ELNH
Figure 12. P10C68 RECALL CYCLE 2: E (bar) controlled timing diagram (see note 16).
t
WHGL
t
NLGL
t
ELGL
t
GLQX2
DQ
(DATA
OUT)
HIGH IMPEDANCE
W
G
NE
t
GLNH
E
Figure 13. P10C68 RECALL CYCLE 3: E (bar) controlled timing diagram (see note 16).
相關(guān)PDF資料
PDF描述
P10C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
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