參數(shù)資料
型號： P2600ECRP2
英文描述： MCU CMOS 44 LD 40MHZ 8K OTP, -40C to +85C, 44-PLCC, T/R
中文描述： SIDAC的| 300V五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 109/161頁
文件大小： 986K
代理商： P2600ECRP2
SIDACtor
Data Book
UL 497B
Teccor Electronics
(972) 580-7777
4 - 35
R
R
5,#&<+
Overview
UL 497B provides requirements for protectors which are used in communication and
fire alarm circuits. All SIDACtors are evaluated against this standard as individual
components and are listed as UL 497B compliant devices under UL file No. E133083.
Construction and Performance
UL 497B is divided into two sections covering construction and performance
requirements. Table 4-22 lists the contents of each main section.
Table 4-22 UL497B
Performance Requirements Specific to the SIDACtor
1.
Strike Voltage Breakdown Test
- Protectors are required to breakdown within the
manufacturers specified breakdown range or within 10% of a nominal single
breakdown voltage rating (Figure 4-18).
2.
Endurance Conditioning
- Protectors are subjected to 50 impulse cycles. Each
cycle is a 1000V
PK
, 10A, 10x1000μs pulse. Pulses are applied in one polarity at
10 second intervals, and then repeated in the opposite polarity.
3.
Variable Ambient Conditioning
- Protectors must comply with the strike voltage
requirements after being subjected to an ambient temperature of 0
°
C for 4
hours and again after being subjected to an ambient temperature of 49
°
C for an
additional 4 hours.
4.
Discharge Test
- Protectors must comply with strike voltage requirements after
being subjected to five successive discharges from a 2μF capacitor charged to
1000V
DC
(Figure 4-19).
Construction
Performance
General
General
Corrosion protection
Strike Voltage Breakdown
Field-Wiring Connections
Endurance Conditioning
Components
Temperature Test
Spacing
Dielectric Voltage-Withstand test
Fuses
Vibration Conditioning
Jarring Test
Discharge Test
Repeated Discharge Test
Polymeric Materials Test
High Temperature Test
Marking
相關(guān)PDF資料
PDF描述
P2600SARP MCU CMOS 44 LD LOW PWR, -40C to +85C, 44-TQFP, TRAY
P2600SBRP MCU CMOS 40 LD 40MHZ 16K OTP, -40C to +125C, 40-PDIP, TUBE
P2600SCRP SIDAC|300V V(BO) MAX|800MA I(S)|DO-214AA
P3000AA61RP MCU CMOS 44LD LOW PWR, -40C to +85C, 44-QFN, T/R
P3002AA SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2600G_LRP 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Teccor㈢ brand Protection Thyristors
P2600GALRP 功能描述:硅對稱二端開關(guān)元件 220V 50A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600GBLRP 功能描述:硅對稱二端開關(guān)元件 220V 80A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600Q12ALRP 功能描述:硅對稱二端開關(guān)元件 220V 50A QFN 3X3 2L SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600Q12BLRP 功能描述:硅對稱二端開關(guān)元件 220V 100A SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*