參數(shù)資料
型號: P89LPC9321FN,112
廠商: NXP Semiconductors
文件頁數(shù): 48/71頁
文件大小: 0K
描述: IC 80C51 MCU FLASH 8K 28-DIP
產(chǎn)品培訓(xùn)模塊: LPC9351/9321 Overview
標準包裝: 13
系列: LPC900
核心處理器: 8051
芯體尺寸: 8-位
速度: 18MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 26
程序存儲器容量: 8KB(8K x 8)
程序存儲器類型: 閃存
EEPROM 大小: 512 x 8
RAM 容量: 768 x 8
電壓 - 電源 (Vcc/Vdd): 2.4 V ~ 3.6 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-DIP(0.600",15.24mm)
包裝: 管件
配用: 568-4000-ND - DEMO BOARD SPI/I2C TO DUAL UART
568-3510-ND - DEMO BOARD SPI/I2C TO UART
622-1003-ND - KIT FOR LCD DEMO
568-1759-ND - EMULATOR DEBUGGER/PROGRMMR LPC9X
568-1758-ND - BOARD EVAL FOR LPC93X MCU FAMILY
其它名稱: 568-4700-5
935287657112
P89LPC9321FN
P89LPC9321
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 16 November 2010
52 of 71
NXP Semiconductors
P89LPC9321
8-bit microcontroller with accelerated two-clock 80C51 core
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper), IDD(idle), and IDD(pd) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4]
See Section 8 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
ITHL
HIGH-LOW transition current
all ports; VI =1.5 V at
VDD =3.6 V
30
-
450
μA
RRST_N(int) internal pull-up resistance on
pin RST
10
-
30
k
Ω
BOD interrupt
Vtrip
trip voltage
falling stage
BOICFG1,
BOICFG0 = 01
2.25
-
2.55
V
BOICFG1,
BOICFG0 = 10
2.60
-
2.80
V
BOICFG1,
BOICFG0 = 11
3.10
-
3.40
V
rising stage
BOICFG1,
BOICFG0 = 01
2.30
-
2.60
V
BOICFG1,
BOICFG0 = 10
2.70
-
2.90
V
BOICFG1,
BOICFG0 = 11
3.15
-
3.45
V
BOD reset
Vtrip
trip voltage
falling stage
BOE1, BOE0 = 01
2.10
-
2.30
V
BOE1, BOE0 = 10
2.25
-
2.55
V
BOE1, BOE0 = 11
2.80
-
3.20
V
rising stage
BOE1, BOE0 = 01
2.20
-
2.40
V
BOE1, BOE0 = 10
2.30
-
2.60
V
BOE1, BOE0 = 11
2.90
-
3.30
V
BOD EEPROM/FLASH
Vtrip
trip voltage
falling stage
2.25
-
2.55
V
rising stage
2.30
-
2.60
V
Vref(bg)
band gap reference voltage
1.11
1.23
1.34
V
TCbg
band gap temperature
coefficient
-10
20
ppm/
°C
Table 10.
Static characteristics …continued
VDD = 2.4 V to 3.6 V unless otherwise specified.
Tamb = 40 °Cto+85 °C for industrial applications, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
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