參數(shù)資料
型號(hào)： PCF51JM64EVLK
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 28/49頁(yè)
文件大?。?/td> 0K
描述： MCU 32BIT 64K FLASH 80-LQFP
標(biāo)準(zhǔn)包裝： 90
系列： MCF51JM
核心處理器： Coldfire V1
芯體尺寸： 32-位
速度： 50MHz
連通性： CAN，I²C，SCI，SPI，USB OTG
外圍設(shè)備： LVD，PWM，WDT
輸入/輸出數(shù)： 66
程序存儲(chǔ)器容量： 64KB（64K x 8）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 16K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 12x12b
振蕩器型： 外部
工作溫度： -40°C ~ 105°C
封裝/外殼： 80-LQFP
包裝： 托盤(pán)
MCF51JM128 ColdFire Microcontroller, Rev. 4
Preliminary Electrical Characteristics
Freescale Semiconductor
34
2.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
2.14
USB Electricals
The USB electricals for the USBOTG module conform to the standards documented by the Universal Serial Bus Implementers
Forum. For the most up-to-date standards, visit http://www.usb.org.
If the Freescale USBOTG implementation requires additional or deviant electrical characteristics, this space would be used to
communicate that information.
Table 21. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typ1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25C unless otherwise stated.
Max
Unit
1
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2
Supply voltage for read operation
VRead
2.7
5.5
V
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
5
Byte program time (random location)(2)
tprog
9
tFcyc
6
Byte program time (burst mode)(2)
tBurst
4
tFcyc
7
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8
Mass erase time(2)
tMass
20,000
tFcyc
9C
Program/erase endurance4
TL to TH = –40C to + 105C
T = 25
C
4 Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
10
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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