The average chip-juncti" />
參數(shù)資料
型號(hào)： PCF51JM64EVLK
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 9/49頁(yè)
文件大?。?/td> 0K
描述： MCU 32BIT 64K FLASH 80-LQFP
標(biāo)準(zhǔn)包裝： 90
系列： MCF51JM
核心處理器： Coldfire V1
芯體尺寸： 32-位
速度： 50MHz
連通性： CAN，I²C，SCI，SPI，USB OTG
外圍設(shè)備： LVD，PWM，WDT
輸入/輸出數(shù)： 66
程序存儲(chǔ)器容量： 64KB（64K x 8）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 16K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 12x12b
振蕩器型： 外部
工作溫度： -40°C ~ 105°C
封裝/外殼： 80-LQFP
包裝： 托盤(pán)
Preliminary Electrical Characteristics
MCF51JM128 ColdFire Microcontroller, Rev. 4
Freescale Semiconductor
17
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, CJA = Package thermal resistance, junction-to-ambient, C/WPD = Pint PI/OPint =
IDD VDD, Watts — chip internal powerPI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K (TJ + 273C)
Eqn. 2
Solving equations 1 and 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations 1 and 2 iteratively for any
value of TA.
2.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
3 1s - Single Layer Board, one signal layer
4 2s2p - Four Layer Board, 2 signal and 2 power layers
Table 8. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulse per pin
–
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
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