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參數(shù)資料
| 型號： | PDTA115E |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| 中文描述： | PNP配電阻型晶體管；R1=100千歐姆，R2=100千歐姆 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 93K |
| 代理商： | PDTA115E |
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit
http://www.semiconductors.philips.com
.
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com
.
Fax:
+31 40 27 24825
Printed in The Netherlands
R75/03/pp
14
Date of release:
2004 Jul 30
Document order number:
9397 750 13648
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PDTA115EE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ |
| PDTA115EE T/R | 功能描述:開關晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA115EE,115 | 功能描述:開關晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA115EE115 | 制造商:NXP Semiconductors 功能描述:TRANS PNP W/RES 50V SOT-416 |
| PDTA115EEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
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