參數(shù)資料
型號(hào)： PHB112N06T
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 262K
代理商： PHB112N06T
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
5 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
55
V
Figure 10
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 0 V; V
DS
= 55 V
T
j
= 25
°
C
T
j
= 175
°
C
V
DS
= 0 V; V
GS
=
±
20 V
V
GS
= 10 V; I
D
= 25 A;
Figure 8
and
9
T
j
= 25
o
C
T
j
= 175
°
C
2.0
1.0
3.0
4.0
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
7.2
8.0
16
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward)
voltage
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 50 A; V
DD
= 44 V;
V
GS
= 10 V;
Figure 15
87
24
29
3264
720
389
24
94
100
80
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 13
4352
863
533
36
141
140
112
V
DD
= 30 V; R
D
= 1.2
;
V
GS
= 5 V; R
G
= 10
I
S
= 25 A; V
GS
= 0 V;
Figure 14
I
S
= 75 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.85
1.2
V
65
0.17
ns
μ
C
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