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參數(shù)資料
| 型號： | PHB125N06L |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Logic level FET(TrenchMOS 晶體管邏輯電平FET) |
| 中文描述： | TrenchMOS場效應(yīng)晶體管邏輯電平（TrenchMOS晶體管邏輯電平場效應(yīng)管） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | PHB125N06L |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP125N06LT, PHB125N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
8 m
(V
GS
= 5 V)
R
DS(ON)
≤
7 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB125N06LT is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
75
75
240
250
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
March 1998
1
Rev 1.400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP125N06LT | TrenchMOS transistor Logic level FET |
| PHP125N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場效應(yīng)管) |
| PHP125 | P-channel enhancement mode MOS transistor(P溝道增強(qiáng)型MOS晶體管) |
| PHP130N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場效應(yīng)管) |
| PHP13N40E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB125N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHB125N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB125N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB129NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB129NQ04LT /T3 | 功能描述:MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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