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參數(shù)資料
| 型號(hào)： | PHB64N03LT |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | PHB64N03LT |
Philips Semiconductors
PHB64N03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
2 of 12
9397 750 10026
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
25
≤
T
j
≤
175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
-
-
-
-
10.4
15
Max
25
64
85
175
12
18
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°
C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
≤
T
j
≤
175
°
C
25
≤
T
j
≤
175
°
C; R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
Min
-
-
-
-
-
-
-
55
55
Max
25
25
64
52
±
20
240
85
+175
+175
Unit
V
V
A
A
V
A
W
°
C
°
C
V
GS
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
gate-source voltage
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
T
mb
= 25
°
C
-
-
64
240
A
A
unclamped inductive load; I
D
= 55 A;
t
AL
= 0.1 ms; V
DD
= 15 V; R
GS
= 50
;
V
GS
= 5V; starting T
j
= 25
°
C
unclamped inductive load; V
DD
= 15 V;
R
GS
= 50
; V
GS
= 5 V; starting T
j
= 25
°
C
-
60
mJ
I
DS(AL)S
non-repetitive drain-source
avalanche current
-
64
A
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