參數(shù)資料
型號: PHB78NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 40 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 3/14頁
文件大?。?/td> 292K
代理商: PHB78NQ03LT
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 14 November 2001
3 of 14
9397 750 08916
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
P
der
(%)
03aa24
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
I
der
(%)
P
der
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
°
)
-------------------
100
%
×
=
03aaa175
1
10
102
10
3
1
10
10
2
I
D
(A)
DC
1 ms
tp = 10 μs
100 μs
VDS (V)
RDSon = VDS / ID
10 ms
100 ms
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